Power MOSFET
Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intr...
Description
Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode
IXFA130N10T IXFP130N10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
FC Md
Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Continuous Transient
Maximum Ratings
100
V
100
V
20
V
30
V
TC = 25C Lead Current Limit, RMS
TC = 25C, Pulse Width Limited by TJM
130
A
120
A
350
A
TC = 25C TC = 25C
65
A
750
mJ
TC = 25C
360
W
-55 ... +175
C
175
C
-55 ... +175
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Characteristic Values Min. Typ. Max.
100
V
2.5
4.5 V
200 nA
10 A 500A
9.1 m
VDSS = ID25 =
RDS(on)
100V 130A 9.1m
TO-263 (IXFA)
TO-220 (IXFP)
G S D (Tab)
G DS
D (Tab)
G = Gate D = Drain S = Source Tab = Drain
Features
Ultra-Low On Resistance Avalanche Rated Low Package Inductance
- Easy to Drive and to Protect 175C Operating Temperature Fast Intrinsic Diode
Advantages
Easy to Mount Space Savings Hig...
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