IXFP130N10T2

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  175C TC = 25C 130 120 300 65 800 20 360 -55 ... +175 175 -55 ... +175 A A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 65A, Notes 1 & 2 Characteristic Values Min. Typ. Max. 100 V 2.0 4.5 V            200 nA 10 A 500 A 10.1 m VDSS = ID25 =  RDS(on) 100V 130A 10.1m TO-263 (IXFA) TO-220 (IXFP) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  175°C Operating Temperature  High Current Handling Capability  Fast Intrinsic Rectifier  Dynamic dV/dt Rated  Low R DS(...