IXFP3N50PM

Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 3N50PM VDSS ID25 RDS(on) trr = = ≤ ≤ 500 2.7 2.0 200 V A Ω ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 50 Ω TC = 25° C Maximum Ratings 500 500 ± 30 ± 40 2.7 8 3 10 100 10 36 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C OVERMOLDED TO-220 (IXTP...M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain Features l 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 l l l Md Weight 1.13/10 Nm/lb.in. 4 g l Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 1.8 A Note 1 TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 200 2.0 V V nA µA µA Ω Advantages l l l Easy to mount Space savings High pow...