Power MOSFET
Polar TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA7N100P IXFP7N1...
Description
Polar TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA7N100P IXFP7N100P
VDSS ID25
RDS(on)
= 1000V = 7A ≤ 1.9Ω
TO-263 AA (IXFA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ±30 ±40 7 18 7 300 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g
z z z z z
G S D (Tab)
TO-220AB (IXFP)
G
DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 (TO-220)
300 260 1.13 / 10 2.5 3.0
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V
z z z
High Power Density Easy to Mount Space Savings
Applications
z
±100 nA 15 μA 1.0 mA 1.9 Ω
z z z z
VGS = 10V, ID = 0.5 ID25, Note 1
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
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