DF2S6.2FS

DF2S6.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.2FS Product for Use Only as Protection against Electrostatic Discharge (ESD). 0.6±0.05 Unit: mm * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z 2terminal ultra small package suitable for mounting on small space. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg Rating 150* 150 −55~150 Unit mW °C °C fSC 0.48+0.02 -0.03 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ⎯ temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ⎯ operating temperature/current/voltage, etc.) are within the TOSHIBA 1-1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.0006 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Pad Dimension(Reference)Unit : mm 0.85 www.DataSheet4U.net 0.26 0.21 Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dy...