ESD Protection Diodes
ESD Protection Diodes Silicon Epitaxial Planar
DF2S6.8UFS
DF2S6.8UFS
1. Applications
• ESD Protection
Note: This produ...
Description
ESD Protection Diodes Silicon Epitaxial Planar
DF2S6.8UFS
DF2S6.8UFS
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
SOD-923
1: Cathode 2: Anode
1: Cathode 2: Anode
fSC
The SOD-923 package is recommended.
Package
Product name
SOD-923 fSC
DF2S6.8UFS,L3M (Note 1) DF2S6.8UFS,L3J , DF2S6.8UFS,L3F
Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the "M".
Start of commercial production
2007-01
1 2014-07-23 Rev.5.0
DF2S6.8UFS
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a...
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