FCA16N60N

FCA16N60N N-Channel MOSFET August 2009 TM SupreMOS FCA16N60N N-Channel MOSFET 600V, 16A, 0.170Ω Features RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A Ultra low gate charge ( Typ. Qg = 40.2nC) Low effective output capacitance 100% avalanche tested RoHS compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G DS TO-3PN FCA Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM www.DataSheet4U.net Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) FCA16N60N 600 ±30 16.0 10.1 48.0 355 5.3 1.34 100 20 134.4 1.08 -55 to +150 300 Units V V A A mJ A mJ V/ns V/ns W W/oC oC o EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for...