IRFBL10N60A

PD - 91819C SMPS MOSFET IRFBL10N60A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l VDSS 600V Rds(on) max 0.61Ω ID 11A Super-D2 PakTM Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 11 7.0 44 180 1.4 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C www.DataSheet4U.net Applicable Off Line SMPS Topologies: l l Active Clamped Forward Main Switch Notes  through … are on page 8 www.irf.com 1 2/16/00 IRFBL10N60A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– V(BR)DSS Typ. ––– 0.69 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ...