IXFR180N07

HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight www.DataSheet4U.net VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 70 70 ±20 ±30 180 76 720 180 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 V 4.0 ...