Polar3 HiperFET Power MOSFET
Advance Technical Information
Polar3TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsi...
Description
Advance Technical Information
Polar3TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
VDSS ID25
RDS(on)
= 600V = 50A ≤ 145mΩ
TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 50 125 25 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g Features
z z z z
G D
S
D (Tab)
TO-247 (IXFH)
G
D
S
D (Tab) D = Drain Tab = Drain
G = Gate S = Source
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247
300 260 1.13 / 10 4.0 5.5 6.0
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA
z z
High Power Density Easy to Mount Space Savings
Applications
z
25 μA 2 mA 145 mΩ
z z z z
VGS = 10V, ID = 0.5 ID25, Note 1
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