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IXFH86N30T

IXYS Corporation

Power MOSFET

TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH86N30T IXFT86N...


IXYS Corporation

IXFH86N30T

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TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH86N30T IXFT86N30T VDSS = 300V ID25 = 86A  RDS(on) 46m TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V 20 V 30 V 86 A 190 A 43 A 1.5 J 860 W 20 V/ns -55 to +150 C +150 C -55 to +150 C 300  C 260 C 1.13/10 Nm/lb.in. 6.0 g 4.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25 , Note 1 Characteristic Values Min. Typ. Max. 300 V 3.0 5.0 V 200 nA 25 A 1 mA 46 m G DS D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Avalanche Rated  High Current Handling Capability  Fast Intrinsic Rectifier  Low RDS(on) Advantages  Easy to Mount  Space Savings  High Power Density Applications  DC-DC Converters  Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  AC Motor ...




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