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IXFK88N30P Dataheets PDF



Part Number IXFK88N30P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Polar HiPerFET Power MOSFET
Datasheet IXFK88N30P DatasheetIXFK88N30P Datasheet (PDF)

PolarTM HiPerFETTM Power MOSFET IXFT88N30P IXFH88N30P IXFK88N30P VDSS ID25 trr RDS(on) = = ≤ ≤ 300V 88A 40mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net TO-268 (IXFT) G S Tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°.

  IXFK88N30P   IXFK88N30P


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