Trench Gate Power HiperFET
Preliminary Technical Information
Trench Gate Power HiperFET
N-Channel Enhancement Mode Avalanche Rated
IXFV110N25T IX...
Description
Preliminary Technical Information
Trench Gate Power HiperFET
N-Channel Enhancement Mode Avalanche Rated
IXFV110N25T IXFV110N25TS
VDSS ID25
RDS(on)
= 250V = 110A ≤ 24mΩ
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g
PLUS220 (IXFV)
G
D
S
(TAB)
PLUS220SMD (IXFV_S)
G S D (TAB) G = Gate S = Source D = Drain TAB = Drain
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting force
300 260 11..65 / 2.5..14.6 4
Features
z z
International standard packages Avalanche rated
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Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 ± 200 V V nA Applications
z z z z z z
Easy to mount Space savings High power density
10 μA 1 mA 24 mΩ
VGS = 10V, ID = 0.5 ID25, Notes 1, 2
z z z
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies
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