IXGP12N120A3

GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC90 VCE(sat) ≤ 3.0V TO-263 AA (IXGA) G S D (Tab) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 22 12 60 ICM = 24 VCE ≤ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C °C N/lb. Nm/lb.in. g g g TO-220AB (IXGP) G DS D (Tab) TO-247 (IXGH) G D S D (Tab) G = Gate S = Source Features z z D = Drain Tab = Drain Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 300 260 10..65 / 2.2..14.6 1.13 / 10 2.5 3.0 6.0 Optimized for Low Conduction Losses International Standard Packages Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 10 275 ±100 TJ = 125°C 2.40 2.75 3.0 V V μA μA nA V V High Power Density Low Gate Drive Requirement Applications z z z z z z z z z VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = IC90, VGE = 15V, Note 1 Power Inverters UPS Mo...