GenX3 1200V IGBTs
GenX3TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
VCES = 12...
Description
GenX3TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
VCES = 1200V IC110 = 20A VCE(sat) ≤ 2.5V
TO-263 AA (IXGA)
G E C (Tab)
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 40 20 120 ICM = 40 @VCE ≤ 960 180 -55 ... +150 150 -55 ... +150 V V V V A A A A V W °C °C °C Nm/lb.in. N/lb. °C °C g g g
TO-220AB (IXGP)
G
CE
C (Tab)
TO-247 (IXGH)
G
C
E
C (Tab)
Mounting Torque (TO-247 & TO-220) Mounting Force (TO-263) Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s TO-263 TO-220 TO-247
1.13/10 10..65 / 2.2..14.6 300 260 2.5 3.0 6.0
G = Gate E = Emitter
C = Collector Tab = Collector
Features
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Optimized for Low Conduction Losses International Standard Packages
Advantages
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Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 ±100 TJ = 125°C 2.3 2.5 2.5 V V μA mA nA V V
High Power Density Low Gate Drive Requirement
Applications
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VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 20A, VGE = 15V, Note 1
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