IXGH30N120B3

GenX3TM 1200V IGBTs High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE(sat) tfi(typ) TO-263 (IXGA) = = ≤£ = 1200V 30A 3.5V 204ns G Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 60 30 150 ICM = 60 VCE ≤ VCES 300 - 55 ... +150 150 - 55 ... +150 W °C °C °C °C °C Nm/lb.in. g g g Features z E V V V V A A A A TO-247 (IXGH) TO-220 (IXGP) C (Tab) G CE C (Tab) G C E C (Tab) C = Collector Tab = Collector 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 300 260 1.13/10 2.5 3.0 6.0 G = Gate E = Emitter www.DataSheet4U.net z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.0 5.0 V V Advantages z z High Power Density Low Gate Drive Requirement 100 μA 1 mA ±100 2.96 2.95 3.5 nA V V Applications z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding...