IXGA48N60C3

GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA) 600V 48A 2.5V 38ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Limited by Leads) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 48 250 30 300 ICM = 100 300 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in. g g g G C E G C (TAB) E G E (TAB) TO-247 (IXGH) TO-220 (IXGP) (TAB) G = Gate E = Emitter Features z z C = Collector TAB = Collector 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-247&TO-220) TO-247 TO-220 TO-263 300 260 1.13/10 6.0 3.0 2.5 z z z Optimized for Low Switching Losses Square RBSOA Avalanche Rated Fast Switching International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C Characteristic Values Min. 600 3.0 5.5 Typ. Max. V V Advantages z z High Power Density Low Gate Drive Requirement Applications z z z z z z z z 25 μ A 250 μA ±100 nA 2.3 1.8 2.5 V V High Frequ...