GenX3 600V IGBT
GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for up to 5kHz switching
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
VCES = 600V IC11...
Description
GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for up to 5kHz switching
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
VCES = 600V IC110 = 48A VCE(sat) ≤ 1.35V
TO-263 (IXGA)
G
Symbol
VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C
Maximum Ratings
600 600 ± 20 ± 30 48 300 ICM = 96 300 -55 ... +150 150 -55 ... +150 V V V V A A A W °C °C °C °C °C Nm/lb.in. g g g
G G C
E
(TAB)
TO-247 (IXGH)
(TAB) E
TO-220 (IXGP)
(TAB) C E
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-220) TO-247 TO-220 TO-263
300 260 1.13/10 6.0 3.0 2.5
G = Gate E = Emitter Features
z z
C = Collector TAB = Collector
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Optimized for low conduction losses International standard packages
Advantages
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Symbol Test Conditions
(TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values
Min. 600 3.0 5.0 Typ. Max. V V 25 μ A 250 μA ±100 nA 1.18 1.35 V
z
High power density Low gate drive requirement
Applications
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Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
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