C5508

PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GHz technology Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number 2SC5508 2SC5508-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style 8 mm wide emboss taping 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units). ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage www.DataSheet4U.net Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 35 115 150 –65 to +150 Unit V V V mA mW °C °C Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tj Tstg Note TA = +25 °C (free air) THERMAL RESISTANCE Item Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Value 150 650 Unit °C/W °C/W Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Document No. P13865EJ1V0DS00 (1st edition) Date Published March 1...