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SFF80N20

Solid States Devices

Avalanche Rated N-channel MOSFET

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ss...


Solid States Devices

SFF80N20

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SFF80N20 Series 80 AMP , 200 Volts, 25 mΩ Avalanche Rated N-channel MOSFET Features:        Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF80N20 ___ ___ ___ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ Package 3/ 4/ M = TO-254 Z = TO-254Z __ = Straight Leads DB = Down Bend UB = Up Bend N = TO-258 P = TO-259  Maximum Ratings5/ Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature www.DataSheet4U.net Symbol VDSS continuous transient Value 200 ±20 ±30 55 80 48 60 1500 50 150 -55 to +175 1.0 (typ.0.75) Units V V A A A mJ W ºC ºC/W VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC @ TC = 25ºC @ TC = 25ºC @ TC = 175ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) TO-258 (N) TO-259 (P) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%...




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