Document
SPI15N65C3
CoolMOSTM Power Transistor
Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC
TO-262-3-1 CoolMOS C3 designed for: • Notebook Adapter
Type SPI15N65C3
Package P-TO262-3-1
Marking 15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C
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Value 15 9.4 45 460 0.8
Unit A
Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3)
I D,pulse E AS E AR
T C=25 °C I D=3 A, V DD=50 V I D=5 A, V DD=50 V
mJ
Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage
I AR dv /dt V GS V DS=0...480 V static AC (f>1 Hz)
5.0 50 ±20 ±30 156 -55 ... 150
A V/ns V
Power dissipation Operating and storage temperature
P tot T j, T stg
T C=25 °C
W °C
Rev. 2.0
page 1
2007-09-10
SPI15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Symbol Conditions IS I S,pulse T C=25 °C Value 15 45 Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.8 62 K/W
T sold
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=0.675 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.4 A, T j=25 °C V GS=10 V, I D=9.4 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 650 2.1 3 0.5 3.9 25 µA V
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-
25 0.25
100 0.28 nA Ω
-
0.68 1.4
Ω
Rev. 2.0
page 2
2007-09-10
SPI15N65C3
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode
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Values typ. max.
Unit
C iss C oss C o(er)
V GS=0 V, V DS=25 V, f =1 MHz
-
1600 540 67
-
pF
V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=15 A, R G=6.8 Ω 120 32 14 70 11 ns
Q gs Q gd Qg V plateau V DD=480 V, I D=15 A, V GS=0 to 10 V
-
9 29 63 5.4
-
nC
-
V
Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
V SD t rr Q rr I rrm
V GS=0 V, I F=15 A, T j=25 °C
-
1.0 420 8 32
1.2 -
V ns µC A
V R=480 V, I F=I S, di F/dt =100 A/µs
-
1)
J-STD20 and JESD22 Limited only by maximum temperature. Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
2)
3)
4)
5)
6)
Rev. 2.0
page 3
2007-09-10
SPI15N65C3
1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
160 102
limited by on-state resistance
140
1 µs
120 101 100
10 µs 100 µs
P tot [W]
I D [A]
1 ms DC 10 ms
80
60 10 40
0
20 10-1 0 25 50 75 100 125 150 100 101 102 103
0
T C [°C]
V DS [V] 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
50
20 V 10 V
3 Max. transient thermal impedance Z(thJC)=f(tp) parameter: D=t p/T
100
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0.5
40
8V
7V 0.2
Z thJC [K/W]
30 10
-1
0.05 0.02
I D [A]
0.1
6V
20
5.5 V
0.01 single pulse
10
5V
4.5 V
10
-2
0 10-4 10-3 10-2 10-1 0 5 10 15 20 25
10-5
t p [s]
V DS [V]
Rev. 2.0
page 4
2007-09-10
SPI15N65C3
5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS
25
20 V 10 V 8V 20 V
6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS
4
20
6V
7V 5.5 V
3
7V
R DS(on) [Ω ]
15
I D [A]
5V
2
6.5 V
10
4.5 V
6V
1 5
5V
5.5 V
0 0 5 10 15 20 25
0 0 10 20 30 40
V DS [V]
I D [A]
7 Drain-source on-state resistance R DS(on)=f(T j); I D= 9.4 A; V GS=10 V
8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
0.8
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50
25°C
40 0.6
R DS(on) [Ω ]
30 0.4
98 % typ
I D [A]
150°C
20
0.2 10
0 -50 0 50 100 150
0 0 2 4 6 8 10
T j [°C]
V GS [V]
Rev. 2.0
page 5
2007-09-10
SPI15N65C3
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