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SPI15N65C3 Dataheets PDF



Part Number SPI15N65C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description CoolMOSTM Power Transistor
Datasheet SPI15N65C3 DatasheetSPI15N65C3 Datasheet (PDF)

SPI15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC TO-262-3-1 CoolMOS C3 designed for: • Notebook Adapter Type SPI15N65C3 Package P-TO262-3-1 Marking 15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions .

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SPI15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC TO-262-3-1 CoolMOS C3 designed for: • Notebook Adapter Type SPI15N65C3 Package P-TO262-3-1 Marking 15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C www.DataSheet4U.net Value 15 9.4 45 460 0.8 Unit A Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 °C I D=3 A, V DD=50 V I D=5 A, V DD=50 V mJ Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I AR dv /dt V GS V DS=0...480 V static AC (f>1 Hz) 5.0 50 ±20 ±30 156 -55 ... 150 A V/ns V Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C W °C Rev. 2.0 page 1 2007-09-10 SPI15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Symbol Conditions IS I S,pulse T C=25 °C Value 15 45 Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.8 62 K/W T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=0.675 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.4 A, T j=25 °C V GS=10 V, I D=9.4 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 650 2.1 3 0.5 3.9 25 µA V www.DataSheet4U.net - 25 0.25 100 0.28 nA Ω - 0.68 1.4 Ω Rev. 2.0 page 2 2007-09-10 SPI15N65C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode www.DataSheet4U.net Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=25 V, f =1 MHz - 1600 540 67 - pF V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=15 A, R G=6.8 Ω 120 32 14 70 11 ns Q gs Q gd Qg V plateau V DD=480 V, I D=15 A, V GS=0 to 10 V - 9 29 63 5.4 - nC - V Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V GS=0 V, I F=15 A, T j=25 °C - 1.0 420 8 32 1.2 - V ns µC A V R=480 V, I F=I S, di F/dt =100 A/µs - 1) J-STD20 and JESD22 Limited only by maximum temperature. Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) 5) 6) Rev. 2.0 page 3 2007-09-10 SPI15N65C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 160 102 limited by on-state resistance 140 1 µs 120 101 100 10 µs 100 µs P tot [W] I D [A] 1 ms DC 10 ms 80 60 10 40 0 20 10-1 0 25 50 75 100 125 150 100 101 102 103 0 T C [°C] V DS [V] 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 50 20 V 10 V 3 Max. transient thermal impedance Z(thJC)=f(tp) parameter: D=t p/T 100 www.DataSheet4U.net 0.5 40 8V 7V 0.2 Z thJC [K/W] 30 10 -1 0.05 0.02 I D [A] 0.1 6V 20 5.5 V 0.01 single pulse 10 5V 4.5 V 10 -2 0 10-4 10-3 10-2 10-1 0 5 10 15 20 25 10-5 t p [s] V DS [V] Rev. 2.0 page 4 2007-09-10 SPI15N65C3 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS 25 20 V 10 V 8V 20 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 4 20 6V 7V 5.5 V 3 7V R DS(on) [Ω ] 15 I D [A] 5V 2 6.5 V 10 4.5 V 6V 1 5 5V 5.5 V 0 0 5 10 15 20 25 0 0 10 20 30 40 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D= 9.4 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.8 www.DataSheet4U.net 50 25°C 40 0.6 R DS(on) [Ω ] 30 0.4 98 % typ I D [A] 150°C 20 0.2 10 0 -50 0 50 100 150 0 0 2 4 6 8 10 T j [°C] V GS [V] Rev. 2.0 page 5 2007-09-10 SPI15N65C3 .


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