SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • World...
SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
1 2 3
VDS @ Tjmax RDS(on) ID
PG-TO220FP P G-TO262
560 0.19 21
PG-TO220
V Ω A
Type SPP21N50C3 SPI21N50C3 SPA21N50C3
Package PG-TO220 PG-TO262 PG-TO220FP
Ordering Code Q67040-S4565 Q67040-S4564 SP000216364
Marking 21N50C3 21N50C3 21N50C3
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
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Symbol SPP_I ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt
page 1
Value SPA
Unit A 211)
13.11) 63 690 1 21 ±20 ±30 34.5 15 W °C V/ns
2009-12-22
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=10A, VDD=50V
63 690 1 21 ±20 ±30 208
A mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=21A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt
Rev. 3.2
7)
A V
-55...+150
SPP21N50C3 SPI21N50C3, SPA21N50C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 400 V, ID = 21 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambi...