Power MOSFET
Power MOSFET
IRFP448, SiHFP448
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
500 VGS = 10 V
84...
Description
Power MOSFET
IRFP448, SiHFP448
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
500 VGS = 10 V
84
Qgs (nC)
8.4
Qgd (nC)
50
Configuration
Single
0.60
D
TO-247AC
S
D G
G
S N-Channel MOSFET
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
TO-247AC IRFP448PbF SiHFP448-E3 IRFP448 SiHFP448
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EA...
Similar Datasheet