SIHFP450

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 150 20 80 Single D FEATURES 500 0.40 Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 ± 20 14 8.7 56 1.5 760 8.7 19 190 3.5 - 55 to + 150 300d 10 1.1 UNIT V Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energ...