IRFP450A, SiHFP450A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
IRFP450A, SiHFP450A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 64 16 26 Single
D
FEATURES
500 0.40
Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free Available and
Available
RoHS*
COMPLIANT
TO-247
APPLICATIONS
Switch Mode Power Supply (SMPS)
G
Uninterruptable Power Supply High Speed Power Switching
S D G S N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
Two
Transistor Forward Half Bridge, Full Bridge PFC Boost
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage
www.DataSheet4U.net
SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg
Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
TC = 25 °C
for 10 s 6-32 or M3 screw
LIMIT 500 ± 30 14 8.7 56 1.5 760 14 19 190 4.1 - 55 to + 150 300d 10 1.1
UNIT V
A W/°C mJ A mJ W V/ns °C lbf · in N·m
Notes a. Repet...