IRFP450N, SiHFP450N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qg...
IRFP450N, SiHFP450N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single
D
FEATURES
500 0.37
Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free
RoHS
COMPLIANT
TO-247
APPLICATIONS
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching
G
TYPICAL SMPS TOPOLOGIES
S D G S N-Channel MOSFET
Two
Transistor Forward Half Bridge and Full Bridge PFC Boost
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage
www.DataSheet4U.net
SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg
LIMIT 500 ± 30 14 8.8 56 1.6 170 14 20 200 5.0 - 55 to + 150 300d 10 1.1
UNIT V
Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. b. c. d.
A W/°C mJ A mJ W V/ns °C lbf · in N·m
TC = 25 °C
for 10 s 6-32 or M3 screw
Repetiti...