SIHFP460

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single D FEATURES 500 0.27 Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP460PbF SiHFP460-E3 IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER www.DataSheet4U.net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 20 20 13 80 2.2 960 20 28 280 3.5 - 55 to + 150 300d 10 1.1 UNIT V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A W/°C mJ A mJ W V/ns °C lbf · in N·m Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energ...