Power MOSFET
IRFP460N, SiHFP460N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Description
IRFP460N, SiHFP460N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 124 40 57 Single
D
FEATURES
500 0.24
Low Gate Charge Qg Results in Simple Drive Available Requirement Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free Available
TO-247
APPLICATIONS
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching
G S D G S N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
Full Bridge Power Factor Correction Boost
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
www.DataSheet4U.net
SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Energyb
LIMIT 500 ± 30 20 13 80 2.2
UNIT V
A
Pulsed Drain
Currenta
Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw
W/°C mJ A mJ W V/ns °C lbf · in N·m
340 20 28 280 5.0 - 55 to + 150 300d 10 1.1
Currenta
Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a. Repetitive rating; pul...
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