IRFP460N

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 124 40 57 Single D FEATURES 500 0.24 Low Gate Charge Qg Results in Simple Drive Available Requirement Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free Available TO-247 APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching G S D G S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES Full Bridge Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current www.DataSheet4U.net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Energyb LIMIT 500 ± 30 20 13 80 2.2 UNIT V A Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw W/°C mJ A mJ W V/ns °C lbf · in N·m 340 20 28 280 5.0 - 55 to + 150 300d 10 1.1 Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pul...