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IXFB30N120P
Polar HiPerFET Power MOSFET
Description
Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ ≤ 300 ns trr Symbol VDSS VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25...
IXYS Corporation
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IXFB30N120P
Polar HiPerFET Power MOSFET
- IXYS Corporation
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