DatasheetsPDF.com

IXFB100N50P Dataheets PDF



Part Number IXFB100N50P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFB100N50P DatasheetIXFB100N50P Datasheet (PDF)

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A ≤ 49 mΩ ≤ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ .

  IXFB100N50P   IXFB100N50P


Document
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A ≤ 49 mΩ ≤ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 100 75 250 100 100 5 20 1250 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb g PLUS264TM (IXFB) G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.5...2.7 10 Advantages l l l Plus 264TM package for clip or spring Space savings High power density Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±200 25 2000 49 V V nA µA µA mΩ VGS = 10 V, ID = 0.5 ID25, Note 1 www.DataSheet4U.net © 2006 IXYS All rights reserved DS99496E(01/06) IXFB 100N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 50 80 20 VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 140 36 VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 RG = 1 Ω (External) 29 110 26 240 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 96 78 S nF pF pF ns ns ns ns nC nC nC 0.10 ° C/W 0.13 ° C/W PLUS264TM (IXFB) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = 0.5 ID25, Note 1 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/µs VR = 100V Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 100 250 1.5 200 0.6 6.0 A A V ns µC A 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFB 100N50P Fig. 1. Output Characteristics @ 25ºC 100 90 80 70 V GS = 10V 8V 220 200 180 160 8V V GS = 10V 9V Fig. 2. Extended Output Characteristics @ 25ºC I D - Amperes 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 I D - Amperes 7V 140 120 100 80 60 40 6V 7V 6V 5V 3.5 4 4.5 5 5.5 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125ºC 100 90 80 70 V GS = 10V 8V 7V 3.1 2.8 2.5 Fig. 4. R DS(on) Normalized to ID = 50A Value v s. Junction Temperature V GS = 10V R DS(on) - Normalized I D - Amperes 2.2 1.9 1.6 1.3 1 I D = 50A I D = 100A 60 50 6V 40 30 20 5V 10 0 0 1 2 3 4 5 6 7 8 9 10 11 0.7 0.4 -50 -25 0 25 50 75 100 125 150 V DS - Volts T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 50A Value vs. Drain Current 3 2.8 2.6 V GS = 10V TJ = 125ºC 90 80 70 Fig. 6. Maximum Drain Current v s. Case Temperature External Lead Current Limit R DS(on) - Normalized 2.4 I D - Amperes TJ = 25ºC 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 140 160 180 200 220 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes T J - Degrees Centigrade © 2006 IXYS All rights reserved IXFB 100N50P Fig. 7. Input Admittance 160 140 120 105 150 135 120 Fig. 8. Transconductance g f s - Siemens I D - Amperes 100 80 60 40 TJ = 125ºC 25ºC - 40ºC 90 75 60 45 30 TJ = - 40ºC 25ºC 125ºC 20 0 4 4.5 5 5.5 6 6.5 7 7.5 15 0 0 20 40 60 80 100 120 140 160 180 V GS - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 9 250 8 7 V DS = 250V I D = 50A I G = 10mA Fig. 10. Gate Charge I S - Amperes 200 V GS - Volts TJ = 125ºC TJ = 25ºC 0.4 0.6 0.8 1 1.2 1.4 1.6 6 5 4 3 2 1 150 100 50 0 0 0 25 50 75 100 125 150 175 200 225 250 V SD - Volts Q G - NanoCoulombs Fig. 11. Capacitance 100,000 f = 1 MHz 1,000 Fig. 12. Forward-Bias Safe Operating Area Capacitance - PicoFarads C iss 10,000 RDS(on) Limit 25µs 100 100µs I D - Amperes C oss 1,000 1ms 10 10ms DC TJ = 150ºC TC = 25ºC 1 C rss 100 0 5 10 15 20 25 30 35 40 10 100 1000 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXFB 100N50P Fig. 13. Maximum Transient Thermal Resistance 1.000 R (th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0..


IXFB30N120P IXFB100N50P IXFB100N50Q3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)