IXFB100N50Q3

Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 100A 49mΩ 250ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 100 300 100 5 50 1560 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb. g Advantages z z z z z z z G D S Tab D = Drain Tab = Drain G = Gate S = Source Features Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.5 6.5 V V z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls ±200 nA 50 μA 2.5 mA 49 mΩ VGS = 10V, ID = 0.5 ID25, Note 1 www.DataSheet4U.net © 2011 IXYS CORPORATION, All Rights Reserved DS100309(03/11) IXFB100N50Q3 Symbo...