IXFC13N50

ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC13N50 VDSS ID25 RDS(on) trr = 500 = 12 = 0.4 ≤ 250 V A Ω ns ISOPLUS 220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 12 48 13 18 5 140 -55 ... +150 150 -55 ... +150 300 3 V V V V A A A mJ V/ns W °C °C °C °C g z z z z G D S Isolated back surface* G = Gate S = Source Features z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated FastintrinsicRectifier Applications z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA µA mA Ω z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0...