IXFC14N60P

PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 8A 630mΩ 200ns ISOPLUS 220TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 8 42 14 900 10 125 -55 ... +150 150 -55 ... +150 300 260 2500 3000 11..66 / 2.5..14.6 2 V V V V A A A mJ V/ns W °C °C °C °C °C V~ V~ N/lb. g Features UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications: Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 7A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls G = Gate S = Source D = Drain G D S E153432 ...