IXFC14N80P

PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 14N80P (Electrically Isolated Tab) VDSS = 800 V = 8 A ID25 RDS(on) ≤ 770 mΩ ≤ 250 ns trr Maximum Ratings 800 800 ±30 ±40 8 40 7 30 1.2 10 130 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g ISOPLUS220TM (IXFC) E153432 G D S (Isolated Tab) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 2500 11..65/2.5..15 2 Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z z z Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25 1 770 V V nA μA mA mΩ z z z Advantages Easy assembly Space savings High ...