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IXFH12N100P Dataheets PDF



Part Number IXFH12N100P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Polar HiPerFET Power MOSFETs
Datasheet IXFH12N100P DatasheetIXFH12N100P Datasheet (PDF)

PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 12A 1.05Ω 300ns PLUS220 (IXFV) G D S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 1.

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PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 12A 1.05Ω 300ns PLUS220 (IXFV) G D S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 12 24 6 750 15 463 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g PLUS220SMD (IXFV_S) G S D (Tab) TO-247 (IXFH) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 types 300 260 1.13/10 11..65/2.5..14.6 6 4 Features z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 100 V V nA Applications z z z z High Power Density Easy to Mount Space Savings 20 μA 1.0 mA 1.05 Ω z z z z VGS = 10V, ID = 0.5 • ID25, Note 1 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99920B(03/11) www.DataSheet4U.net © 2011 IXYS CORPORATION, All Rights Reserved IXFH12N100P IXFV12N100P IXFV12N100PS Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247&PLUS220) 0.25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 • ID25, Note 1 Gate Input Resistance Characteristic Values Min. Typ. Max. 4.8 8.8 1.9 4080 246 40 30 25 60 36 80 24 35 S Ω pF pF pF ns ns ns ns nC nC nC 0.27 °C/W °C/W PLUS220 Outline Source-Drain Diode TJ = 25°C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 6A, -di/dt = 100A/μs VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 12 48 1.5 A A V TO-247 Outline 300 ns 0.8 7.9 μC 1 2 3 ∅P A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e PLUS220SMD Outline Terminals: 1 - Gate 3 - Source 2 - Drain Dim. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 7,157,338B2 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFH12N100P IXFV12N100P IXFV12N100PS Fig. 1. Output Characteristics @ T J = 25ºC 12 VGS = 10V 8V 10 7V 8 16 6V 6 20 24 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ T J = 25ºC ID - Amperes ID - Amperes 7V 12 6V 8 4 2 5V 4 5V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC 12 VGS = 10V 7V 3.2 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature VGS = 10V 10 2.8 R DS(on) - Normalized 2.4 I D = 12A 8 ID - Amperes 6V 6 2.0 1.6 I D = 6A 4 5V 1.2 0.8 2 0 0 5 10 15 20 25 30 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current 2.8 2.6 2.4 VGS = 10V 14 12 10 Fig. 6. Maximum Drain Current vs. Case Temperature TJ = 125ºC R DS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 2 4 6 8 10 12 14 16 18 20 22 24 TJ = 25ºC ID - Amperes 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2011 IXYS CORPORATION, All Rights Reserved IXFH12N100P IXFV12N100P IXFV12N100PS Fig. 7. Input Admittance 16 14 12 18 16 14 TJ = - 40ºC Fig. 8. Transconductance ID - Amperes 10 8 6 4 2 0 3.0 3.5 4.0 4.5 g f s - Siemens TJ = 125ºC 25ºC - 40ºC 12 10 8 6 4 2 0 25ºC 125ºC 5.0 5.5 6.0 6.5 0 2 4 6 8 10 12 14 16 18 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 35 30 16 14 12 10 8 6 4 2 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 10 20.


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