IXFV15N100P

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 15A 760mΩ 300ns PLUS220 (IXFV) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 15 40 7.5 500 15 543 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g z G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source Features z z D = Drain TAB = Drain Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force (PLUS 220) TO-247 PLUS 220 types 300 260 1.13/10 11..65/2.5..14.6 6 4 z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C 670 Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 100 V V nA Applications: z z z Easy to mount Space savings High power density 25 μA 1.0 mA 760 mΩ z z z z VGS = 10V, ID = 0.5 ID25, Note 1 ...