IXFH16N120P

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFH16N120P IXFT16N120P VDSS ID25 RDS(on) trr = 1200V = 16A ≤ 950mΩ ≤ 300ns TO-247 (IXFH) Maximum Ratings 1200 1200 ± 30 ± 40 16 35 8 800 15 660 -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 5 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g Features z z z TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 200 V V nA Applications: z z z 25 μA 2.5 mA 950 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Ignite...