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IXFH20N60Q Dataheets PDF



Part Number IXFH20N60Q
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs Q-Class
Datasheet IXFH20N60Q DatasheetIXFH20N60Q Datasheet (PDF)

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VDSS ID25 RDS(on) = = = 600 V 20 A 0.35 Ω trr ≤ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 15.

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VDSS ID25 RDS(on) = = = 600 V 20 A 0.35 Ω trr ≤ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 20 80 20 30 1.5 15 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G (TAB) S D = Drain TAB = Drain W °C °C °C °C G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 Features z 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.35 V V nA µA mA Ω IXYS advanced low gate charge process z International standard packages z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2003 IXYS All rights reserved www.DataSheet4U.net DS98549C(03/03) IXFH 20N60Q IXFT 20N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 10 20 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 410 130 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 Ω (External) 20 45 20 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 45 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 80 1.5 250 A A V ns µC A Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 8 TO-268 Outline Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 20N60Q IXFT 20N60Q Fig. 1. Output Characteristics @ 25 Deg. C 20 1 7.5 1 5 VGS = 10V 9V 8V 7V 6V 48 40 VGS = 10V 9V 8V 7V Fig. 2. Extended Output Characteristics @ 25 deg. C ID - Amperes 1 2.5 1 0 7.5 5 2.5 0 0 1 2 ID - Amperes 32 24 6V 1 6 8 0 5V 5V V DS - Volts 3 4 5 6 7 8 0 4 8 1 2 1 6 20 24 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 20 1 7.5 1 5 VGS = 10V 9V 8V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 3 VGS = 10V 1 2.5 1 0 7.5 5 2.5 0 0 RDS(on) - Normalized 2.5 ID - Amperes 2 ID = 20A 1 .5 ID = 10A 1 5V 0.5 3 6 9 1 2 1 5 1 8 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 Value vs. I D 3 VGS = 10V T J = 125ºC 24 20 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized 2.5 2 ID - Amperes T J = 25ºC 1 6 1 2 8 4 0 1 .5 1 0.5 0 1 0 20 30 40 50 -50 -25 0 25 50 75 1 00 1 25 1 50 ID - Amperes TC - Degrees Centigrade © 2003 IXYS All rights reserved IXFH 20N60Q IXFT 20N60Q Fig. 7. Input Admittance 40 35 30 25 20 1 5 1 0 5 0 3.5 4 4.5 5 5.5 6 6.5 7 T J = -40ºC 25ºC 125ºC 42 36 T J = -40ºC 25ºC 125ºC Fig. 8. Transconductance Gfs - Siemens ID - Amperes 30 24 1 8 1 2 6 0 0 1 0 20 30 40 50 60 V GS - Volts ID - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 50 1 0 Fig. 10. Gate Charge 8 IS - Amperes 40 VDS = 300V ID = 10A IG = 10mA VGS - Volts T J = 25ºC 0.9 1 .1 6 30 20 1 0 0 0.3 0.5 0.7 T J = 125ºC 4 2 0 0 20 40 60 80 1 00 V SD - Volts QG - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz 1 Fig. 12. Maximum Transient Thermal Resistance Capacitance - pF C iss 1 000 C oss R(t.


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