Document
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
IXFH 20N60Q IXFT 20N60Q
VDSS ID25
RDS(on)
= = =
600 V 20 A 0.35 Ω
trr ≤ 250ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 20 80 20 30 1.5 15 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
(TAB) S D = Drain TAB = Drain
W °C °C °C °C
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268
300
Features
z
1.13/10 Nm/lb.in. 6 4 g g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.35 V V nA µA mA Ω
IXYS advanced low gate charge process z International standard packages z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification
Advantages
z z z
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
© 2003 IXYS All rights reserved www.DataSheet4U.net
DS98549C(03/03)
IXFH 20N60Q IXFT 20N60Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 10 20 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 410 130 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 Ω (External) 20 45 20 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 45 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 80 1.5 250 A A V ns µC A
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 8
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 20N60Q IXFT 20N60Q
Fig. 1. Output Characteristics @ 25 Deg. C
20 1 7.5 1 5 VGS = 10V 9V 8V 7V 6V 48 40 VGS = 10V 9V 8V 7V
Fig. 2. Extended Output Characteristics @ 25 deg. C
ID - Amperes
1 2.5 1 0 7.5 5 2.5 0 0 1 2
ID - Amperes
32 24
6V 1 6 8 0
5V
5V
V DS - Volts
3
4
5
6
7
8
0
4
8
1 2
1 6
20
24
V DS - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
20 1 7.5 1 5 VGS = 10V 9V 8V 7V 6V
Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature
3 VGS = 10V
1 2.5 1 0 7.5 5 2.5 0 0
RDS(on) - Normalized
2.5
ID - Amperes
2 ID = 20A 1 .5 ID = 10A 1
5V
0.5 3 6 9 1 2 1 5 1 8 -50 -25 0 25 50 75 1 00 1 25 1 50
V DS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D25 Value vs. I D
3 VGS = 10V T J = 125ºC 24 20
Fig. 6. Drain Current vs. Case Temperature
RDS(on) - Normalized
2.5
2
ID - Amperes
T J = 25ºC
1 6 1 2 8 4 0
1 .5
1
0.5 0 1 0 20 30 40 50
-50
-25
0
25
50
75
1 00
1 25
1 50
ID - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXFH 20N60Q IXFT 20N60Q
Fig. 7. Input Admittance
40 35 30 25 20 1 5 1 0 5 0 3.5 4 4.5 5 5.5 6 6.5 7 T J = -40ºC 25ºC 125ºC 42 36 T J = -40ºC 25ºC 125ºC
Fig. 8. Transconductance
Gfs - Siemens
ID - Amperes
30 24 1 8 1 2 6 0 0
1 0
20
30
40
50
60
V GS - Volts
ID - Amperes
Fig. 9. Source Current vs. Source-To-Drain Voltage
60 50 1 0
Fig. 10. Gate Charge
8
IS - Amperes
40
VDS = 300V ID = 10A IG = 10mA
VGS - Volts
T J = 25ºC 0.9 1 .1
6
30 20 1 0 0 0.3 0.5 0.7 T J = 125ºC
4
2
0 0 20 40 60 80 1 00
V SD - Volts
QG - nanoCoulombs
Fig. 11. Capacitance
1 0000 f = 1M Hz 1
Fig. 12. Maximum Transient Thermal Resistance
Capacitance - pF
C iss 1 000 C oss
R(t.