PolarHV HiPerFET Power MOSFET
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH IXFT IXFV IXFV
20...
Description
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH IXFT IXFV IXFV
20N80P 20N80P 20N80P 20N80PS
VDSS ID25
RDS(on) trr
= 800 V = 20 A ≤ 520 m Ω ≤ 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
Maximum Ratings 800 800 ± 30 ± 40 20 50 10 30 1.0 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C
TO-247 (IXFH)
(TAB)
TO-268 (IXFT)
G
S
D (TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
Maximum lead temperature for soldering Plastic case for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 types
300 260
PLUS220 SMD(IXFV..S)
1.13/10 Nm/lb.in. 1..65 / 2.5..15 6 5.5 4 N/lb g g g G S
D (TAB)
G = Gate S = Source Features
D = Drain Tab = Drain
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ
l l l
l
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advanta...
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