IXFH230N075T2

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N075T2 VDSS ID25 RDS(on) = 75V = 230A ≤ 4.2mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ± 20 230 160 700 115 850 480 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C g G D S Tab G = Gate S = Source D = Drain Tab = Drain Features z z International Standard Package 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds 300 260 6 Easy to Mount Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C VGS = 10V, ID = 50A, Note 1 Characteristic Values Min. Typ. Max. 75 2.0 4.0 V V z z z Automotive - Motor Drives - 12V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications ±200 nA 25 μA 250 μA 4.2 mΩ www.DataSheet4U.net © 2010 IXYS CORPORATION, All Rights Reserved DS100075A(03/10) IXFH230N075T2 Symbol...