HiPerFET Power MOSFETs Q-Class
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Symbol VDSS VDGR VGS VGS...
Description
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Mounting Force TO-247 TO-268 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFH23N80Q IXFT23N80Q
VDSS = 800 V = 23 A ID25 RDS(on) = 0.42 Ω
trr ≤ 250 ns
Maximum Ratings 800 800 ± 30 ± 40 23 92 23 45 1.5 5 500 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S G = Gate S = Source
TAB = Drain
Features
z z z
1.13/10 Nm/lb.in.
z
20...120/4.5...27 N/lb 6 4 g g
z z
IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier
Advantages
z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA µA mA Ω
z
Easy to mount Space savings High power density
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 3 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
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