IXFH320N10T2

TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 320 A 160 A 800 A 160 A 1.5 J 15 V/ns 1000 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13 / 10 6 4 Nm/lb.in. g g Characteristic Values Min. Typ. Max. 100 V 2.0 4.0 V ±200 nA 25 μA 1.75 mA 3.5 mΩ G DS D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC...