Power MOSFET
Advance Technical Information
TrenchT2TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrin...
Description
Advance Technical Information
TrenchT2TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH340N075T2 IXFT340N075T2
VDSS ID25
RDS(on)
= 75V = 340A ≤ 3.2mΩ
TO-247 (IXFH)
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 75 75 ± 20 340 160 850 170 960 935 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g g
G
D
S
D (TAB)
TO-268 (IXFT) G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13 / 10 6 4
Features
z z
International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Note 1
Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 V V nA μA
z z
Easy to Mount Space Savings High Power Density
Applications
z z z
1.5 mA 3.2 mΩ
DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications
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