Power MOSFET
Advanced Technical Information
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Hig...
Description
Advanced Technical Information
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 40N50Q IXFT 40N50Q
VDSS = 500 V = 40 A ID25 RDS(on) = 0.14 Ω trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ±30 ±40 40 160 40 50 2.5 20 500 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S (TAB)
G = Gate D = Drain S = Source TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
300
Features
z z
1.13/10 Nm/lb.in. 6 4 g g
IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on)
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 25 1 0.14 V V nA µA mA Ω
z z
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0...
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