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IXFH42N60P3

IXYS Corporation

Power MOSFET

Polar3TMHiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH42N60P3 D G S ...


IXYS Corporation

IXFH42N60P3

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Polar3TMHiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH42N60P3 D G S VDSS = ID25 = RDS(on)  600V 42A 185m TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V  30 V  40 V 42 A 100 A 21 A 1 J 35 V/ns 830 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 6 Nm/lb.in g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.0 5.0 V           100 nA 25 A 1.5 mA 185 m G D S Tab G = Gate D = Drain S = Source Tab = Drain Features  International Standard Package  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls © 2020 IXYS CORPORA...




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