HiPerFET Power MOSFETs
Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A =...
Description
Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A = 0.75 Ω
trr ≤ 300 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g
PLUS 247TM (IXFX)
G
D
D (TAB) S
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting z Space savings z High power density
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.75 Ω
VDSS VGS(th) IGSS IDSS RDS(on)
VG...
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