Power MOSFET
PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK20N120P IXFX20N120P...
Description
PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK20N120P IXFX20N120P
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings
1200
V
1200
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
20
A
50
A
10
A
1
J
IS IDM, VDD VDSS, TJ 150C TC = 25C
15
780
-55 ... +150 150
-55 ... +150
V/ns
W
C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in N/lb
TO-264 PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
1200
V
3.5
6.5 V
200 nA
50 A 5 mA
570 m
VDSS =
ID25 =
RDS(on)
trr
1200V 20A 570m 300ns
TO-264 (IXFK)
G D S
Tab
PLUS247 (IXFX)
G
D S
Tab
G = Gate D = Drain S = Source Tab = Drain
Features
Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Sup...
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