PROCESS
Small Signal Transistor
CP782X
PNP - Low VCE(SAT) Transistor Chip
www.DataSheet4U.com
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 26 x 26 MILS 5.9 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 25,536 PRINCIPA...
