PROCESS
Small Signal MOSFET Transistor
P - Channel Enhancement-Mode Transistor Chip
CP794R
www.DataSheet4U.com
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 15.7 x 15.7 MILS 3.9 MILS 3.9 x 3.9 MILS 9.1 x 8.1 MILS Al-Si - 35,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH...
