CPD73

PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip www.DataSheet4U.com PROCESS DETAILS Die Size Die Thickness Bonding Pad Area 1 (+DC) Bonding Pad Area 2 (AC) Bonding Pad Area 3 (-DC) Bonding Pad Area 4 (AC) Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMFBR-6F 25 x 25 MILS 6.0 MILS 3.0 x 3.0 MILS 3.0 x 7.0 MILS 3.0 x 4.0 MILS 3.0 x 7.0 MILS Al - 12,000Å Au - 5,000Å R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD73 Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m ...